AON2802 30v dual n-channel mosfet general description product summary v ds i d (at v gs =10v) 2a r ds(on) (at v gs =10v) < 60m w r ds(on) (at v gs =4.5v) < 68m w r ds(on) (at v gs =2.5v) < 88m w typical esd protection hbm class 3a symbol the AON2802 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v g1 d 1 s1 g2 d2 s2 dfn 2x2a top view bottom view pin 1 pin 1 s1 g1 d2 d1 d1 d2 s2 g2 symbol v ds v gs i dm t j , t stg symbol t 10s steady-state power dissipation b p d maximum junction-to-ambient a c/w maximum junction-to-ambient a d 100 c/w r q ja 50 80 60 t a =25c w 2.1 1.3 t a =70c v 12 gate-source voltage t a =25c t a =70c a i d 2 1.6 8 pulsed drain current c continuous drain current g v maximum units parameter drain-source voltage 30 c thermal characteristics units parameter typ max junction and storage temperature range -55 to 150 rev 0: sep. 2012 www.aosmd.com page 1 of 5 free datasheet http:///
AON2802 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 0.7 1.05 1.5 v i d(on) 8 a 49 60 t j =125c 77 94 54 68 m w 66 88 m w g fs 12 s v sd 0.75 1 v i s 1.5 a c iss 245 pf c oss 35 pf c rss 20 pf r g 5 w q g (10v) 5.7 10 nc q g (4.5v) 2.6 5 nc q gs 0.5 nc q gd 1.0 nc t 2 ns drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =2a reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters v ds =v gs i d =250 m a v ds =0v, v gs =10v gate-body leakage current forward transconductance gate drain charge total gate charge electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current r ds(on) static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =2a v gs =2.5v, i d =1a v gs =4.5v, i d =1a diode forward voltage maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =2a gate source charge t d(on) 2 ns t r 3.5 ns t d(off) 22 ns t f 3.5 ns t rr 2 ns q rr 3 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =2a, di/dt=100a/ m s body diode reverse recovery charge i f =2a, di/dt=100a/ m s turn-on delaytime turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =7.5 w , r gen =3 w turn-off fall time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. rev 0: sep. 2012 www.aosmd.com page 2 of 5 free datasheet http:///
AON2802 typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 0 1 2 3 4 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 20 40 60 80 100 0 2 4 6 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =2a v gs =4.5v i d =1a v gs =2.5v i d =1a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) 2.5v 10v 4.5v v gs =2.0v v gs =2.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 40 60 80 100 120 0 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =2a 25 c 125 c rev 0: sep. 2012 www.aosmd.com page 3 of 5 free datasheet http:///
AON2802 typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 6 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =2a 0 50 100 150 200 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =100 c/w rev 0: sep. 2012 www.aosmd.com page 4 of 5 free datasheet http:///
AON2802 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t v gs d iode r ecovery t est c ircuit & w aveform s v ds + rr q = - idt - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff ig v gs - + vd c l v ds isd isd v ds - i f di/dt i r m v dd v dd t rr rev 0: sep. 2012 www.aosmd.com page 5 of 5 free datasheet http:///
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